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? semiconductor components industries, llc, 2013 october, 2013 ? rev. 9 1 publication order number: bc846bpdw1t1/d bc846bpdw1, BC847BPDW1, bc848cpdw1 series dual general purpose transistors npn/pnp duals (complementary) these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 363/sc ? 88 which is designed for low power surface mount applications. features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings ? npn rating symbol value unit collector-emitter voltage bc846, sbc846 bc847, sbc847 bc848 v ceo 65 45 30 v collector-base voltage bc846, sbc846 bc847, sbc847 bc848 v cbo 80 50 30 v emitter ? base voltage v ebo 6.0 v collector current ? continuous i c 100 madc maximum ratings ? pnp rating symbol value unit collector-emitter voltage bc846, sbc846 bc847, sbc847 bc848 v ceo ? 65 ? 45 ? 30 v collector-base voltage bc846, sbc846 bc847, sbc847 bc848 v cbo ? 80 ? 50 ? 30 v emitter ? base voltage v ebo ? 5.0 v collector current ? continuous i c ? 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com sot ? 363 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 xx = device code m = date code = pb ? free package ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. device package shipping ? ordering information BC847BPDW1t2g sot ? 363 (pb ? free) 3,000 / tape & reel sBC847BPDW1t1g sot ? 363 (pb ? free) 3,000 / tape & reel bf bf mark bc848cpdw1t1g sot ? 363 (pb ? free) 3,000 / tape & reel bl bc846bpdw1t1g, sbc846bpdw1t1g sot ? 363 (pb ? free) 3,000 / tape & reel bb xx m 1 6 (note: microdot may be in either location) sbc846bpdw1t2g sot ? 363 (pb ? free) 3,000 / tape & reel bb BC847BPDW1t1g sot ? 363 (pb ? free) 3,000 / tape & reel bf sBC847BPDW1t3g sot ? 363 (pb ? free) 10,000 / tape & reel bf
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 2 thermal characteristics characteristic symbol max unit total device dissipation per device fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c mw/ c thermal resistance, junction ? to ? ambient r ja 328 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. electrical characteristics (npn) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = 10 a, v eb = 0) bc846, sbc846 series bc847b, sbc847b only bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = 10 a) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = 1.0 a) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) bc846b, sbc846b, bc847b, sbc847b bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, sbc846b, bc847b, sbc84b7 bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 3 electrical characteristics (pnp) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 ma) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)ceo ? 65 ? 45 ? 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = ? 10 a, v eb = 0) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)ces ? 80 ? 50 ? 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = ? 10 a) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)cbo ? 80 ? 50 ? 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = ? 1.0 a) bc846, sbc846 series bc847, sbc847 series bc848 series v (br)ebo ? 5.0 ? 5.0 ? 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ? 30 v) (v cb = ? 30 v, t a = 150 c) i cbo ? ? ? ? ? 15 ? 4.0 na a on characteristics dc current gain (i c = ? 10 a, v ce = ? 5.0 v) bc846b, sbc846b, bc847b, sbc847b bc848c (i c = ? 2.0 ma, v ce = ? 5.0 v) bc846b, sbc846b, bc847b, sbc847b bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v ce(sat) ? ? ? ? ? 0.3 ? 0.65 v base ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v be(sat) ? ? ? 0.7 ? 0.9 ? ? v base ? emitter on voltage (i c = ? 2.0 ma, v ce = ? 5.0 v) (i c = ? 10 ma, v ce = ? 5.0 v) v be(on) ? 0.6 ? ? ? ? 0.75 ? 0.82 v small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ? 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ? 0.2 ma, v ce = ? 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 4 typical npn characteristics ? bc846/sbc846 figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 figure 5. collector saturation region i b , base current (ma) figure 6. base ? emitter temperature coefficient i c , collector current (ma) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 5 typical npn characteristics ? bc846/sbc846 figure 7. capacitance v r , reverse voltage (volts) 40 figure 8. current ? gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 6 typical pnp characteristics ? bc846/sbc846 figure 9. dc current gain vs. collector current figure 10. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 11. base emitter saturation voltage vs. collector current figure 12. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 figure 13. collector saturation region i b , base current (ma) figure 14. base ? emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -50 ma -200 ma
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 7 typical pnp characteristics ? bc846/sbc846 figure 15. capacitance v r , reverse voltage (volts) 40 figure 16. current ? gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 8 typical npn characteristics ? bc847/sbc847 series figure 17. dc current gain vs. collector current figure 18. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 19. base emitter saturation voltage vs. collector current figure 20. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 1.0 figure 21. collector saturation region i b , base current (ma) figure 22. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 9 typical npn characteristics ? bc847/sbc847 series figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 10 typical pnp characteristics ? bc847/sbc847 series figure 25. dc current gain vs. collector current figure 26. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.35 figure 27. base emitter saturation voltage vs. collector current figure 28. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 0.30 figure 29. collector saturation region i b , base current (ma) figure 30. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) -0.2 -10 -100 -1.0 -55 c to +125 c i c = -100 ma i c = -20 ma i c = -200 ma i c = -50 ma i c = -10 ma t a = 25 c 1.0
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 11 typical pnp characteristics ? bc847/sbc847 series figure 31. capacitances v r , reverse voltage (volts) 10 figure 32. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 12 typical npn characteristics ? bc848 series figure 33. dc current gain vs. collector current figure 34. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 1000 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 35. base emitter saturation voltage vs. collector current figure 36. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 500 600 700 800 900 1.0 figure 37. collector saturation region i b , base current (ma) figure 38. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 13 typical npn characteristics ? bc848 series figure 39. capacitances v r , reverse voltage (volts) 10 figure 40. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 14 typical pnp characteristics ? bc848 series figure 41. dc current gain vs. collector current figure 42. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 200 300 400 1000 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 43. base emitter saturation voltage vs. collector current figure 44. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) v ce = 5 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c v ce = 5 v 150 c ? 55 c 25 c 0.4 0.7 1.1 500 600 700 800 900 figure 45. collector saturation region i b , base current (ma) figure 46. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) -0.2 -10 -100 -1.0 -55 c to +125 c i c = -100 ma i c = -20 ma i c = -200 ma i c = -50 ma i c = -10 ma t a = 25 c 1.0
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 15 typical pnp characteristics ? bc848 series figure 47. capacitances v r , reverse voltage (volts) 10 figure 48. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 16 figure 49. thermal response figure 50. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ? v ce lim- its of the transistor that must be observed for reliable op- eration. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 50 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 49. at high case or ambient temperatures, thermal limita- tions will reduce the power that can be handled to values less than the limitations imposed by the secondary break- down. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01
bc846bpdw1, BC847BPDW1, bc848cpdw1 series http://onsemi.com 17 package dimensions sc ? 88/sot ? 363/sc70 ? 6 case 419b ? 02 issue y style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc846bpdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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